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PESDXS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 03 -- 11 September 2008 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
FEATURES * Uni-directional ESD protection of up to two lines * Max. peak pulse power: Ppp = 150 W at tp = 8/20 s * Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A * Low reverse leakage current: IRM < 1 nA * ESD protection > 30 kV * IEC 61000-4-2; level 4 (ESD) * IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 s. APPLICATIONS * Computers and peripherals * Communication systems * Audio and video equipment * High speed data lines * Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING TYPE NUMBER PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ MARKING CODE E1 E2 E3 E4 E5
1
PESDXS2UQ series
QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage diode capacitance VR = 0 V; f = 1 MHz number of protected lines PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION VALUE 3.3, 5, 12, 15 and 24 UNIT V
200, 150, 38, 32 pF and 23 2
3 1 3 2 2
001aaa732 sym022
Fig.1 Simplified outline (SOT663) and symbol.
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NXPSemiconductors
Product specification
Double ESD protection diodes in SOT663 package
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Ppp Ipp PARAMETER peak pulse power peak pulse current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Tj Tamb Tstg Notes 1. Non-repetitive current pulse 8/20 s exponential decaying waveform; see Fig.2. 2. Measured across either pins 1 and 3 or pins 2 and 3. junction temperature operating ambient temperature storage temperature CONDITIONS 8/20 s pulse; notes 1 and 2 8/20 s pulse; notes 1 and 2 - DESCRIPTION plastic surface mounted package; 3 leads
PESDXS2UQ series
VERSION SOT663
MIN. - - - - - - - -65 -65
MAX. 150 15 15 5 5 3 150 +150 +150
UNIT W A A A A A C C C
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
ESD maximum ratings SYMBOL ESD PARAMETER electrostatic discharge capability CONDITIONS
PESDXS2UQ series
VALUE
UNIT
IEC 61000-4-2 (contact discharge); notes 1 and 2 PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ HBM MIL-Std 883 PESDXS2UQ series 10 kV 30 30 30 30 23 kV kV kV kV kV
Notes 1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3. 2. Measured across either pins 1 and 3 or pins 2 and 3. ESD standards compliance ESD STANDARD IEC 61000-4-2; level 4 (ESD); see Fig.3 HBM MIL-Std 883; class 3 >4 kV CONDITIONS >15 kV (air); > 8 kV (contact)
001aaa191
handbook, halfpage
120
MLE218
Ipp 100 % 90 %
Ipp (%)
100 % Ipp; 8 s
80
e-t 50 % Ipp; 20 s
40
10 %
0 0 10 20 30 t (s) 40
tr = 0.7 to 1 ns 30 ns 60 ns
t
Fig.2
8/20 s pulse waveform according to IEC 61000-4-5.
Fig.3
ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2.
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VRWM PARAMETER reverse stand-off voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ IRM reverse leakage current PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ VBR breakdown voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Cd diode capacitance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ V(CL)R clamping voltage PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ notes 1 and 2 Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 15 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 5 A Ipp = 1 A Ipp = 3 A - - - - - - - - - - f = 1 MHz; VR = 0 V - - - - - VRWM = 3.3 V VRWM = 5 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IZ = 5 mA 5.2 6.4 14.7 17.6 26.5 - - - - - - - - - - CONDITIONS
PESDXS2UQ series
MIN. - - - - -
TYP.
MAX. 3.3 5 12 15 24 3 300 30 50 50 6.0 7.2 15.3 18.4 27.5 275 215 100 70 50 8 20 9 20 19 35 23 40 36 70
UNIT V V V V V A nA nA nA nA V V V V V pF pF pF pF pF V V V V V V V V V V
0.55 50 <1 <1 <1 5.6 6.8 15.0 18.0 27.0 200 150 38 32 23 - - - - - - - - - -
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
SYMBOL Rdiff PARAMETER differential resistance PESD3V3S2UQ PESD5V0S2UQ PESD12VS2UQ PESD15VS2UQ PESD24VS2UQ Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.2. 2. Measured either across pins 1 and 3 or pins 2 and 3. GRAPHICAL DATA IR = 5 mA IR = 5 mA IR = 5 mA IR = 1 mA IR = 0.5 mA - - - - - CONDITIONS
PESDXS2UQ series
MIN. - - - - -
TYP.
MAX. 40 15 15 225 300
UNIT
104 Ppp (W) 103
001aaa726
1.2 Ppp Ppp(25C) 0.8
001aaa193
102
0.4
10 1 10
102 tp (s)
103
0 0 50 100 150 Tj (C) 200
Tamb = 25 C. tp = 8/20 s exponential decaying waveform; see Fig.2.
Fig.5 Fig.4 Peak pulse power dissipation as a function of pulse time; typical values.
Relative variation of peak pulse power as a function of junction temperature; typical values.
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
PESDXS2UQ series
240 Cd (pF) 200
001aaa727
50 Cd (pF) 40
001aaa728
160
(1)
30
120
(2)
20
(1) (2)
80
10
(3)
40 0 1 2 3 4 VR (V) 5
0 0 5 10 15 20 VR (V) 25
(1) PESD3V3S2UQ; VRWM = 3.3 V. (2) PESD5V0S2UQ; VRWM = 5 V. Tamb = 25 C; f = 1 MHz.
(1) PESD12VS2UQ; VRWM = 12 V. (2) PESD15VS2UQ; VRWM = 15 V. (3) PESD24VS2UQ; VRWM = 24 V. Tamb = 25 C; f = 1 MHz.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
Fig.7
Diode capacitance as a function of reverse voltage; typical values.
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
PESDXS2UQ series
10
001aaa729
IR IR(25C)
(1) (2)
1
10-1 -100
-50
0
50
100 Tj (C)
150
(1) PESD3V3S2UQ; VRWM = 3.3 V. (2) PESD5V0S2UQ; VRWM = 5 V. IR is less than 15 nA at 150 C for: PESD12VS2UQ; VRWM = 12 V. PESD15VS2UQ; VRWM = 15 V. PESD24VS2UQ; VRWM = 24 V.
Fig.8
Relative variation of reverse leakage current as a function of junction temperature; typical values.
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
PESDXS2UQ series
ESD TESTER RZ
450
RG 223/U 50 coax
10x ATTENUATOR
4 GHz DIGITAL OSCILLOSCOPE 50
CZ note 1
Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 D.U.T.: PESDXS2UQ
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 20 V/div horizontal scale = 50 ns/div PESD24VS2UQ GND PESD15VS2UQ
GND
GND
PESD12VS2UQ
GND GND GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
PESD5V2S2UQ
PESD3V3S2UQ clamped +1 kV ESD voltage waveform (IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
vertical scale = 10 V/div horizontal scale = 50 ns/div clamped -1 kV ESD voltage waveform (IEC61000-4-2 network)
001aaa731
Fig.9 ESD clamping test set-up and waveforms.
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
APPLICATION INFORMATION
PESDXS2UQ series
The PESDXS2UQ series is designed for uni-directional protection for up to two data lines against damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDXS2UQ series may be used on lines where the signal polarities are below ground. PESDXS2UQ series provide a surge capability of up to 150 W (Ppp) per line for an 8/20 s waveform.
line 1 to be protected line 2 to be protected
line 1 to be protected
PESDXS2UQ ground
PESDXS2UQ ground
uni-directional protection of two lines
bi-directional protection of one line
001aaa730
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: * Place the PESDXS2UQ as close as possible to the input terminal or connector. * The path length between the PESDXS2UQ and the protected line should be minimized. * Keep parallel signal paths to a minimum. * Avoid running protected conductors in parallel with unprotected conductors. * Minimize all printed-circuit board conductive loops including power and ground loops. * Minimize the length of transient return paths to ground. * Avoid using shared return paths to a common ground point. * Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
Rev. 03 - 11 September 2008
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NXP Semiconductors
Product specification
Double ESD protection diodes in SOT663 package
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PESDXS2UQ series
SOT663
D
B
E
X
Y HE
3
A
1
e1 e bp
2
wMB Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.33 0.23 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT663
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 01-12-04 02-05-21
Rev. 03 - 11 September 2008
11 of 13
NXP Semiconductors
PESDXS2UQ series
Double ESD protection diodes in SOT663 package
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Rev. 03 - 11 September 2008
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NXP Semiconductors
PESDXS2UQ series
Double ESD protection diodes in SOT663 package
Revision history
Table 1. Revision history Release date 20080911 Data sheet status Product data sheet Product specification Product specification Change notice Supersedes PESDXS2UQ_SERIES_2 PESDXS2UQ_SERIES_1 Document ID PESDXS2UQ_SER_N_3 Modifications:
*
Asterisks and note 1 removed in Marking Table
PESDXS2UQ_SERIES_2 20040427 PESDXS2UQ_SERIES_1 20031215
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 September 2008 Document identifier: PESDXS2UQ_SER_N_3

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